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Volumn , Issue , 1995, Pages 1249-
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High dislocation densities in high efficiency GaN-based light-emitting diodes
a
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATION DENSITIES;
EXTERNAL QUANTUM EFFICIENCY;
GAN-BASED LIGHT-EMITTING DIODES;
HIGH DISLOCATION DENSITY;
III-V NITRIDES;
NITRIDE MATERIALS;
NON-RADIATIVE RECOMBINATIONS;
STRUCTURAL DEFECT;
ELECTRIC PROPERTIES;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
TRANSMISSION ELECTRON MICROSCOPY;
CALCULATIONS;
DISLOCATIONS (CRYSTALS);
ELECTROLUMINESCENCE;
NITRIDES;
OPTICAL PROPERTIES;
QUANTUM EFFICIENCY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM COMPOUNDS;
STRUCTURE (COMPOSITION);
LIGHT EMITTING DIODES;
DISLOCATION DENSITY;
GALLIUM NITRIDE;
NONRADIATIVE RECOMBINATION;
STRUCTURAL PROPERTIES;
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EID: 0029637531
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.113252 Document Type: Article |
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Times cited : (957)
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References (10)
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