Cubic gan heteroepitaxy on TIIIN-SiC-Covered Si(001)

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Hiroyama, Yuichi ^a   Tamura, Masao ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICON CARBIDE; SUBSTRATES; SURFACES; THERMAL EFFECTS; THICKNESS MEASUREMENT;

BAND EDGE RECOMBINATION PEAK; GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROEPITAXY; PHOTOLUMINESCENCE INTENSITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033344296     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)

1. M. Mizuta, S. Fujieda, Y. Matsumoto, T. Kawamura, Jpn. J. Appl. Phys. 25, L945 (1986).
2. M J. Paisley, Z. Sitar, J.B. Posthill, RF. Davis, J. Vac. Sci. Teehnol. A7,701 (1989).
3. H. Okumura, S. Misawa, S. Yoshida, Appl. Phys. Lett. 59,1058 (1991).
4. For example, T.D. Moustakas, T. Lei, R.J. Molnar, Physica B185,36 (1993).
5. Y. Hiroyama and M. Tamura, Jpn. J. Appl. Phys. 37, L630 (1998).
6. P. Pirouz, F. Ernst, T.T. Cheng, Mater. Res. Soc. Proc. 116,57 (1988).
7. S. Nishino, J.A. Powell, H.A. Will, Appl. Phys. Lett. 42,460 (1983).
8. H. Nagasawa and Y. Yamaguchi, J. Cryst. Growth 115,612 (1991).
9. A.J. Steckl and J.P. Li, Thin Solid Films 216, 149 (1992).
10. H. Okumura, K. Ohta, G. Feuillet, K. Balakurishnan, S. Chichibu, H. Hamaguchi, P. Hacke, S. Yoshida, J. Cryst. Growth 178,113 (1997).
11. D.J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, K. Lischka, Appl. Phys. Lett. 70, 1311 (1997).
12. J.N. Kuzunia, J.W. Yang, Q.C. Chen, S. Krishnankutty, M. Ashif Khan, Appl. Phys. Lett. 65,2407 (1994).
13. H. Okumura, S. Yoshida, T. Okahisa, Appl. Phys. Lett. 64,997 (1994).