Growth and characterization of GaN layers on SiC substrates

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 601-606

  Dmitriev, V ^a,b   Irvine, K ^a   Bulman, G ^a   Edmond, J ^a   Zubrilov, A ^b,c   Nikolaev, V ^b,c   Nikitina, I ^b,c   Tsvetkov, D ^b,c   Babanin, A ^b,c   Sitnikova, A ^c   Musikhin, Yu ^c   Bert, N ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b Cree Research EED   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030231225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00564-1     Document Type: Article

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