Interfacial void formation during vapor phase growth of 3C-SiC on Si(0 0 1) and Si(1 1 1) substrates characterization by transmission electron microscopy

Journal of Crystal Growth

Volumn 182, Issue 3-4, 1997, Pages 379-388

  Bjorketun L O ^a   Hultman, L ^a   Ivanov, I P ^a   Wahab, Q ^a   Sundgren, J E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Interface; Si; Sic; Transmission electron microscopy; Voids

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); CUBIC SILICON CARBIDE (3C SIC);

SILICON CARBIDE;

EID: 0031550066     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00346-1     Document Type: Article

References (27)

1. R.F. Davis, J.W. Palmour, J.A. Edmond, IEDM 90 (1990) 785.
2. H. Matsunami, S. Nishino, H. Ono, IEEE Trans. Electron Devices 28 (1981) 1235.
3. R.F. Davis, Thin Solid Films 181 (1989) 1.
4. S. Nishino, J.A. Powell, H.A. Will, Appl. Phys. Lett. 42 (1983) 460.
5. T. Yoshinobu, H. Mitsui, Y. Tarui, T. Fuyuki, J. Appl. Phys. 72 (1992) 2006.
6. Q. Wahab, L. Hultman, I.P. Iyanov, M. Willander, J.-E. Sundgren, Thin Solid Films 261 (1995) 317.
7. J.P. Rivière, M. Zaytouni, M.F. Denanot, J. Allain, Mater. Sci. Eng. B 29 (1995) 105.
8. S. Nishino, Y. Hazuki, H. Matsunami, T. Tanaka, J. Electrochem. Soc. 127 (1980) 2674.
9. P. Pirouz, F. Ernst, T.T. Cheng, Mater. Res. Soc. Proc., vol. 116, Materials Research Society, Pittsburgh, PA, 1988, p. 57.
10. P. Pirouz, Polycrystalline Semiconductors 35 (1989) 200.
11. H. Nagasawa, Y. Yamaguchi, J. Crystal Growth 115 (1991) 612.
12. C.J. Mogab, H.J. Leamy, J. Appl. Phys. 45 (1974) 1075.
13. A.J. Steckl, J.P. Li, IEEE Trans. Electron Devices 39 (1992) 64.
14. A.J. Steckl, J.P. Li, Thin Solid Films 216 (1992) 149.
15. J. Graul, E. Wagner, Appl. Phys. Lett. 21 (1972) 67.
16. P. Liaw, R. Davis, J. Elechtrochem. Soc. 132 (1985) 642.
17. B. Molnar, L.M. Shirey, Mater. Res. Soc. Symp., vol. 162, Materials Research Society, Pittsburgh, PA, 1990, p. 457.
18. T. Cheng, P. Pirouz, J. Powell, Mater. Res. Soc. Symp., vol. 148, Materials Research Society, Pittsburgh, PA, 1989, p. 229.
19. J.P. Li, A.J. Steckl, Mater. Res. Soc. Symp., vol. 280, Materials Research Society, Pittsburgh, PA, 1993, p. 739.
20. N. Bécourt, J.L. Ponthenier, A.M. Papon, C Jaussaud, Physica B 185 (1993) 79.
21. I. Kusunoki, M. Hiroi, T. Sato, Y. Igari, S. Tomoda, Appl. Surf. Sci. 45 (1990) 171.
22. O. Kordina, in: Growth and Characterization of Silicon Carbide Power Device Material, Linköping Studies in Science and Technology, Dissertations No. 352, Linköping 1994, p. 47-61.
23. S. Nishino, H. Suhara, H. Ono, H. Matsunami, J. Appl. Phys. 61 (1987) 4889.
24. O. Kordina, L.-O. Björketun, A. Henry, C. Hallin, R.C. Glass, L. Hultman, J.-E. Sundgren, E. Janzèn, J. Crystal Growth 154 (1995) 303.
25. I. Golecki, F. Reidinger, J. Marti, Appl. Phys. Lett. 60 (1992) 1703.
26. J.S. Goela, L.E. Burns, R.L. Taylor, Appl. Phys. Lett. 64 (1994) 131.
27. I.P. Ivanov, L.-O. Björketun, L. Hultman, J.-E. Sundgren, unpublished.