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Applied Physics Letters

Volumn 71, Issue 6, 1997, Pages 797-799

Reversible transition between InGaAs dot structure and InGaAsP flat surface

(4) Ozasa, Kazunari a Aoyagi, Yoshinobu a Park, Young Ju b Samuelson, Lars c

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b Korea Institute of Science and Technology (South Korea)

c LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001701203 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119649 Document Type: Article

Times cited : (38)

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