Effect of low temperature postannealing on the hole density of C δ-doped GaAs and Al0.3Ga0.7As

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2551-2553

  Li, G ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009338902     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117736     Document Type: Article

References (14)

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