An intermediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

Surface Science

Volumn 352-354, Issue , 1996, Pages 646-650

  Guryanov, G M ^a   Cirlin, G E ^a   Golubok, A O ^a   Tipissev, S Ya ^a   Ledentsov, N N ^b   Shchukin, V A ^b   Grundmann, M ^b   Bimberg, D ^b   Alferov, Zh I ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Epitaxy; Gallium arsenide; Indium arsenide; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Semiconductor semiconductor interfaces; Surface structure, morphology, roughness, and topography; Vicinal single crystal surfaces

Indexed keywords

DEPOSITION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SURFACE STRUCTURE;

HETEROEPITAXIAL GROWTH; INDIUM ARSENIDE; SEMICONDUCTOR SEMICONDUCTOR INTERFACES; SUBMONOLAYER MOLECULAR BEAM EPITAXY; SURFACE ARRANGEMENT; VICINAL SINGLE CRYSTAL SURFACES;

SEMICONDUCTOR GROWTH;

EID: 0030142483     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01220-6     Document Type: Article

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