Low-threshold injection lasers based on vertically coupled quantum dots

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 689-695

  Ustinov, V M ^a   Egorov, A Yu ^a   Kovsh, A R ^a   Zhukova, A E ^a   Maximov, M V ^a   Tsatsul'nikov, A F ^a   Gordeev, N Yu ^a   Zaitsev, S V ^a   Shernyakov, Yu M ^a   Bert, N A ^a   Kop'ev, P S ^a   Alferov, Zh I ^a   Ledentsov, N N ^b   Bohrer J ^b   Bimberg, D ^b   Kosogov, A O ^c   Werner, P ^c   Gosele U ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Injection lasers; Molecular beam epitaxy; Quantum dots

Indexed keywords

CURRENT DENSITY; ELECTRON TRANSITIONS; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMIC STABILITY;

VERTICALLY COUPLED QUANTUM DOTS (VECOD);

INJECTION LASERS;

EID: 0005560764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01021-4     Document Type: Article

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