Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 208-214

  Steimetz, E ^a   Schienle, F ^a   Zettler, J T ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELLIPSOMETRY; EPITAXIAL GROWTH; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ARSENIDE; REFLECTANCE ANISOTROPY SPECTROSCOPY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030677202     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00630-6     Document Type: Article

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