Temperature Acceleration of Time-Dependent Dielectric Breakdown

IEEE Transactions on Electron Devices

Volumn 36, Issue 11, 1989, Pages 2462-2465

  Moazzami, Reza ^a   Lee, Jack C ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS--THERMAL EFFECTS; SEMICONDUCTOR DEVICES--ELECTRIC BREAKDOWN;

DIELECTRIC BREAKDOWN; MOS CIRCUITS; TEMPERATURE ACCELERATION; THERMAL FACTORS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024766460     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43668     Document Type: Article

References (14)

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