Test structure for the evaluation of Si substrates

IEICE Transactions on Electronics

Volumn E79-C, Issue 2, 1996, Pages 192-196

  Yoshida, Yoshiko ^a   Kimura, Mikihiro ^a   Rume, Morihiko ^a   Yamamoto, Hidekazu ^a   Koyama, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Crystal defect; Silicon substrate; TDDB; Test structure

Indexed keywords

CRYSTAL DEFECTS; ELECTRODES; EPITAXIAL GROWTH; GATES (TRANSISTOR); MOS DEVICES; OXIDES; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING;

FIELD EDGE ARRAY; FLAT CAPACITOR; GATE EDGE ARRAY; POLYSILICON GATES; TEST STRUCTURE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

SUBSTRATES;

EID: 0030083336     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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