Hole Injection SiO2Breakdown Model for Very Low Voltage Lifetime Extrapolation

IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 761-767

  Schuegraf, Klaus F ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CAPACITORS; CHARACTERIZATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON TUNNELING; ELECTRONS; GATES (TRANSISTOR); OXIDES; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS;

DIELECTRIC LIFETIME; ELECTRICAL STRESS; HOLE INJECTION; POWER SUPPLY VOLTAGE; SILICON DIOXIDE BREAKDOWN CHARACTERIZATION; VERY LOW VOLTAGE LIFETIME EXTRAPOLATION;

SEMICONDUCTOR DEVICE MODELS;

EID: 0028430427     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285029     Document Type: Article

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