Time-Dependent Dielectric Breakdown of Thin Thermally Grown SiO2 Films

IEEE Transactions on Electron Devices

Volumn 32, Issue 2, 1985, Pages 423-428

  Yamabe, Kikuo ^a   Taniguchi, Kenji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001225675     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21958     Document Type: Article

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