Stress Voltage Polarity Dependence of Thermally Grown Thin Gate Oxide Wearout

IEEE Transactions on Electron Devices

Volumn 35, Issue 8, 1988, Pages 1299-1304

  Hokari, Yasuaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS -- DIELECTRIC; INTEGRATED CIRCUITS, VLSI;

GATE OXIDE WEAROUT; THERMALLY GROWN SILICON DIOXIDE; THIN GATE OXIDE;

SILICA;

EID: 0024057331     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2551     Document Type: Article

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