Projecting Gate Oxide Reliability and Optimizing Reliability Screens

IEEE Transactions on Electron Devices

Volumn 37, Issue 7, 1990, Pages 1643-1650

  Moazzami, Reza ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; SEMICONDUCTOR DEVICES, MOS--RELIABILITY;

BREAKDOWN VOLTAGE DISTRIBUTION; BURN-IN PROGRAMS; BURN-IN YIELD; DEFECT-INDUCED BREAKDOWN; GATE OXIDE RELIABILITY; MOS INTEGRATED CIRCUITS;

INTEGRATED CIRCUITS;

EID: 0025464151     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.55751     Document Type: Article

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