SiO2/Si Interface Structures and Reliability Characteristics

Journal of the Electrochemical Society

Volumn 142, Issue 1, 1995, Pages 273-282

  Ohta, Noriko ^a   Ishitani, Akihiko ^a   Tsukiji, Masaru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; DIELECTRIC PROPERTIES; ELECTRODES; ELECTRON TUNNELING; INTERFACES (MATERIALS); NITROGEN; OXIDATION; RELIABILITY; SILICA; STRESS RELAXATION; SYNCHROTRON RADIATION; X RAY CRYSTALLOGRAPHY;

DIELECTRIC BREAKDOWN; GRAZING INCIDENCE X RAY DIFFRACTION; INTERFACE STRUCTURE; POLYCRYSTALLINE SILICON GATE ELECTRODES; STRUCTURAL TRANSITION LAYER; THERMAL OXIDATION; TRANSITION LAYER DENSITY;

STRUCTURE (COMPOSITION);

EID: 0029196889     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2043901     Document Type: Article

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