Characterizing wearout, breakdown, and trap generation in thin silicon oxide

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1780-1787

  Dumin, D J ^a   Maddux, J R ^a   Subramoniam, R ^a   Scott, R S ^a   Vanchinathan, S ^a   Dumin, N A ^a   Dickerson, K J ^a   Mopuri, S ^a   Gladstone, S M ^a   Hughes, T W ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DENSITY (OPTICAL); ELECTRON SCATTERING; ELECTRON TUNNELING; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; STATISTICS; WEAR OF MATERIALS;

HIGH VOLTAGE STRESSING; THIN SILICON OXIDE; TIME-DEPENDENT-DIELECTRIC-BREAKDOWN DISTRIBUTION; TRAP GENERATION; TUNNELING BARRIER; WEAROUT;

ELECTRIC BREAKDOWN;

EID: 0029345918     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587812     Document Type: Article

References (35)