Accelerated Testing of Time-Dependent Breakdown of SiO2

IEEE Electron Device Letters

Volumn 8, Issue 4, 1987, Pages 140-142

  Chen, I C ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - ELECTRIC BREAKDOWN; SILICA;

ACCELERATED TESTING; TIME DEPENDENT BREAKDOWN;

FILMS;

EID: 0023327250     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1987.26580     Document Type: Article

References (13)

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