Correlation of Trap Generation to Charge-to-Breakdown (Qbd): A Physical-Damage Model of Dielectric Breakdown

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1595-1602

  Saraswat, Krishna C ^b  

^a TEXAS INSTRUMENTS   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CORRELATION METHODS; DEGRADATION; DIELECTRIC FILMS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); MATHEMATICAL MODELS; MOS DEVICES; OXIDES; ULSI CIRCUITS;

CHARGE TO BREAKDOWN; MOS CAPACITORS; OXIDE DEGRADATION; OXIDE RELIABILITY; PHYSICAL BOND BREAKING; TRAP GENERATION; TUNNEL OXIDE; ULTRA LARGE SCALE INTEGRATION; ULTRATIN GATE;

ELECTRIC BREAKDOWN;

EID: 0028513959     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310111     Document Type: Article

References (28)

1. Ih-Chin Chen, Stephen E. Holland, and Chenming Hu, “Electrical breakdown in thin gate and tunneling oxides,” IEEE Trans. Electron Devices, vol. ED-32, p. 413, 1985.
2. S. K. Lai, “Interface trap generation in silicon dioxide when electron are captured by trapped holes,” J. Appl. Phys., vol. 54, no. 5, p. 2540, 1983.
3. J. J. Tzou, C. C. Yao, R. Cheung, and H. Chan, “Temperature dependence of charge generation and breakdown in SiO2,” IEEE Electron Device Lett., vol. EDL-7, p. 446, 1986.
4. Eli Harari, “Dielectric breakdown in electrically stressed thin films of thermal SiO2,” J. Appl. Phys., vol. 49, no. 4, p. 2478. 1978.
5. E. Avni and J. Shappir, “A model for silicon-oxide breakdown under high field and current stress,” J. Appl. Phys., vol. 64, no. 2, p. 743, 1988.
6. D. J. DiMaria and J. W. Stasiak, “Trap creation in silicon dioxide produced by hot electrons,” J. Appl. Phys., vol. 65, p. 2342, 1989.
7. Pushkar P. Apte, Taishi Kubota, and Krishna C. Saraswat, “Constant current stress breakdown in ultrathin SiO2 films,” J. Electrochem. Sec., vol. 140, p. 770, 1993.
8. Pushkar P. Apte and Krishna C. Saraswat, “Rapid thermal processing uniformity using multivariable control of a circularly symmetric 3 zone lamp,” IEEE Trans. Semicond. Manuf., vol. 5, 180, June 1992.
9. D. J. DiMaria, T. N. Theis, J. R. Kirtley, F. L. Pesavento, D. W. Dong, and S. D. Brorson, “Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films,” J. Appl. Phys., vol. 57, no. 4, p. 1214, 1985.
10. Y. Nissan-Cohen, J. Shappier, and D. Frohman-Bentchkowsky, “High-field and current-induced positive charge in thermal SiO2 layers,” J. Appl. Phys., vol. 57, no. 8, p. 2830, 1985.
11. D. J. DiMaria, D. Arnold, and E. Cartier, “Degradation and breakdown of silicon dioxide films on silicon,” J. Appl. Lett., vol. 60, p. 2118, 1992.
12. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, “Theory of high field electron transport in silicon dioxide,” Phys. Rev. B, vol. 31, p. 8124, 1985.
13. Pushkar P. Apte and Krishna C. Saraswat, “SiO2 degradation with charge injection polarity,” IEEE Electron Device Lett., vol. 14, p. 512, Nov. 1993.
14. F. J. Grunthaner, B. F. Lewis, N. Zamini, J. Masserjian, and A. Madhukar, “XPS studies of structure-induced radiation effects at the Si/SiO2 interface,” IEEE Trans. Nuclear Sci., vol. NS-27, p. 1640, Dec. 1980.
15. F. J. Grunthaner, P. J. Grunthaner, and J. Masserjian, “Radiation induced defects in Si02 as determined with XPS,” IEEE Trans. Nuclear Sci., vol. NS-29, p. 1462, Dec. 1982.
16. S. Iwamatsu, “Distributions of hole and electron trapping centers in SiC2 film on Si, and the relation with the electrostatic tribo electrification phenomena of quartz,” Appl. Phys. Lett., vol. 48, no. 22, p. 1542, 1986.
17. P. M. Lenahan and P. V. Dressendorfer, “Hole traps and trivalent silicon centers in metal/oxide/silicon devices,” J. Appl. Phys., vol. 55, no. 10, p. 3495, 1984.
18. F. McLean, “A framework for understanding radiation induced interface states in SiO2 MOS structures,” IEEE Trans. Nucl. Sci., vol. NS-27, p. 1651, Dec. 1980.
19. M. M. Moslehi, C. J. Han, K. C. Saraswat, C. R. Helms, and S. Shatas, “Compositional studies of thermally nitrided silicon dioxide (nitroxide),” J. Electrochem. Soc., vol. 132, no. 9, p. 2189, 1985.
20. Takashi Hori and Hiroshi Iwasaki, “Excellent charge-trapping properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Electron Device Lett., vol. 9, p. 168, 1988.
21. Albert T. Wu, V. Murali, Baylor Triplett, D. B. Fraser, and M. Gamer, “Gate bias polarity dependence of charge trapping and time dependent dielectric breakdown in nitrided and reoxidized nitrided oxides,” IEEE Electron Device Lett., vol. 10, p. 443, 1989.
22. Hyunsang Hwang, Wenchi Ting, Dim-Lee Kwong, and Jack Lee, “Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O,” in IEDM Tech Dig., p. 421, 1990.
23. Makoto Yasuda, Hisashi Fukuda, Toshiyuki Iwabuchi, and Seigo Ohno, “Role of SiN bond formed by N2O oxynitridation for improving dielectric properties of ultrathin SiO2 films,” Japan. J. Appl. Phys., vol. 30, 3597, 1991.
24. N. Novkovski and M. Dutoit, “Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processing,” Appl. Phys. Lett., vol. 56, p. 2120, 1990.
25. Takashi Hori, Hiroshi Iwasaki, and Kazuhiko Tsuji, “Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Trans. Electron Devices, vol. 36, p. 340, Feb. 1989.
26. S. D. Brorson, D. J. DiMaria, M. V. Fischetti, F. L. Pesavento, P. M. Solomon, and D. W. Dong, “Direct measurement of the energy distribution of hot electrons in silicon dioxide,” J. Appl. Phys., vol. 58, no. 3, p. 1302, 1985.
27. James A. Knaur and Paul P. Budenstein, “Impulse breakdown in PMMA under megavolt, nanosecond excitation,” IEEE Trans. Electrical Insulation, vol. El-15, p. 313, Apr. 1980.
28. Paul P. Budenstein, “On the mechanism of dielectric breakdown of solids,” IEEE Trans. Electrical Insulation, vol. El-15, p. 225, Mar. 1980.