Low-voltage hot electrons and soft-programming lifetime prediction in nonvolatile memory cells

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 696-702

  Ghetti, Andrea ^a,d   Selmi, Luca ^b   Bez, Roberto ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

^c UNIVERSITY OF UDINE   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EXTRAPOLATION; GATES (TRANSISTOR); HOT CARRIERS; MONTE CARLO METHODS; MOSFET DEVICES; PROM;

CHARGE INJECTION; FLASH MEMORY CELLS; SOFT PROGRAMMING PHENOMENON;

NONVOLATILE STORAGE;

EID: 0032623975     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753703     Document Type: Article

References (37)

1. B. Eitan, D. Frohman-Bentchkowsky, and J. Shappir, "Impact ionization at very low voltages in siliconJ. Appl. Phys., vol. 65, p. 1244, 1982.
2. A. K. Henning, N. M. Chan, J. P. Watt, and J. D. Plummer, "Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technologyIEEE Trans. Electron Devices, vol. ED34, p. 64, Jan. 1987.
3. B. Riccö, E. Sangiorgi, and D. Cantarelli, "Low-voltage hot-electron effects in short-channel MOSFET'sin IEDM Tech. Dig., 1984, p. 92.
4. J. E. Chung, N. C. Jeng, J. E. Moon, P. K. Ko, and C. Hu, "Lowvoltage hot-electron currents and degradation in deep-submicrometer MOSFET'sIEEE Trans. Electron Devices, vol. 37, p. 1651, July 1990.
5. J. F. Van Houdt, D. Wellekens, G. Groeseneken, and H. E. Maes, "Investigation of the soft-write mechanism in source side injection flash EEPROM devicesIEEE Electron Device Lett., vol. 16, p. 181, May 1995.
6. D. Esseni, L. Selmi, R. Bez, L. Ravazzi, and E. Sangiorgi, "Softprogramming in scaled FLASH memory cellsin Proc. European Solid State Device Res. Conf., 1995, p. 549.
7. A. Abramo, C. Fiegna, and F. Venturi, "Hot carrier effects in short MOSFET's at low applied voltagesin IEDM Tech. Dig., 1995, p. 301.
8. M. V. Fischetti and S. Laux, "Monte Carlo study of sub-bandgap impact ionization in small silicon field effect transistorsin IEDM Tech. Dig., 1995, p. 305.
9. D. Esseni, L. Selmi, E. Sangiorgi, R. Bez, and B. Riccö, "Temperature dependence of gate and substrate currents in the CHE crossover regimeIEEE Electron Device Lett., vol. 16, p. 506, Nov. 1995.
10. L. Selmi, B. Fischer, A. Ghetti, and R. Bez, "Hot-carriers at low voltages: New experimental evidences and open issuesin IEDM Tech. Dig., 1996, p. 375.
11. J. D. Bude, A. Frommer, M. R. Pinto, and G. R. Weber, "EEPROM/flash sub 3.0 V drain-source bias hot-carrier writingin IEDM Tech. Dig., 1995, p. 989.
12. D. Esseni, L. Selmi, R. Bez, E. Sangiorgi, and B. Riccö, "Bias and temperature dependence of gate and substrate currents in n-MOSFET's at low drain voltagein IEDM Tech. Dig., 1994, p. 307.
13. A. Abramo, F. Venturi, E. Sangiorgi, J. M. Higman, and B. Riccö, "A numerical method to compute Isotropie band models from anisotropic semiconductor band structuresIEEE Trans. Computer-Aided Design, vol. 12, p. 1327, Sept. 1993.
14. A. Ghetti, L. Selmi, E. Sangiorgi, A. Abramo, and F. Venturi, "A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structuresin IEDM Tech. Dig., 1994, p. 363.
15. A. Ghetti, L. Selmi, R. Bez, and E. Sangiorgi, "Monte Carlo simulation of low-voltage hot-carrier effects in nonvolatile memory cellsin IEDM Tech. Dig., 1996, p. 379.
16. J. D. Bude, T. lizuka, and Y. Kamakura, "Determination of threshold energy for hot-electron interface state generationin IEDM Tech. Dig. 1996, p. 865.
17. C. Hu, S. C. Tarn, F. C. Hsu, P. K. Ko, T. Y. Chan, and K. W. Terrill, "Hot-electron-induced MOSFET degradation: Model, monitor, and improvementIEEE Trans. Electron Devices, vol. ED-32, p. 375, Feb. 1985.
18. P. Cappelletti, A. Cutolo, L. Fratin, L. Ravazzi, and C. Riva, "The FLASH EEPROM cell with Boron p-pocket architecture: Advantages and limitationsin Proc. Non-Volatile Memory Workshop, 1995, p. P2.4.
19. N. D. Arora, J. R. Hauser, and D. J. Roulston, "Electron and hole mobilities in silicon as a function of concentration and temperatureIEEE Trans. Electron Devices, vol. ED-29, p. 292, Feb. 1982.
20. J. D. Bude and M. Mastrapasqua, "Impact ionization and distribution functions in submicron nMOSFET technologiesIEEE Electron Device Lett., vol. 16, p. 439, Oct. 1995.
21. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
22. N. Sano, M. Tomizawa, and A. Yoshii, "Temperature dependence of hotcarrier effects in short-channel Si-MOSFET'sIEEE Trans. Electron Devices, vol. 42, p. 2211, Dec. 1995.
23. C. Jungemann, S. Yamaguchi, and H. Goto, "On the accuracy and efficiency of substrate current calculations for sub-//m nMOSFET'sIEEE Electron Device Lett., vol. 17, pp. 464166, Oct. 1997.
24. J. M. Higman, K. Hess, C. G. Hwang, and R. W. Dutton, "Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFET'sIEEE Trans. Electron Devices, vol. 36, p. 930, May 1989.
25. W. Lui and M. Fukuma, "Exact solution of the Schrödinger equation across an arbitrary one-dimensional piecewise-linear potential barrierJ. Appl. Phys., vol. 60, no. 5, p. 1555, 1986.
26. G. D. Mahan, "Hot electrons in one dimensionJ. Appl. Phys., vol. 58, p. 2242, 1985.
27. E. Sangiorgi, F. Venturi, C. Fiegna, A. Abramo, and F. Capasso, "Nonlocal effects on the electron energy distribution in short-channel devices under high-field conditionsin Proc. Int. Workshop on Computational Electronics, 1992, p. 221.
28. J. D. Bude, "Gate current by impact ionization feedback in submicron MOSFET technologiesin Proc. Symp. VLSI Technology, 1995, p. 101.
29. A. Abramo, R. Brunetti, C. Jacoboni, F. Venturi, and E. Sangiorgi, "A multiband Monte Carlo approach to Coulomb interaction for device analysisJ. Appl. Phys., vol. 76, p. 5786, 1994.
30. M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhys. Rev. B, vol. 38, p. 9721, 1988.
31. M. V. Fischetti, S. Laux, and E. Crabbé, "Understanding hot-electron transport in silicon devices: Is there a shortcut?J. Appl. Phys., vol. 78, no. 2, p. 1058, 1995.
32. J. Bude, K. Hess, and G. J. lafrate, "Impact ionization in semiconductors: Effects of high electric fields and high scattering ratesPhys. Rev. B, vol. 45, p. 10958, 1992.
33. M. Mastrapasqua, J. Bude, M. Pinto, L. Manchanda, and K. F. Lee, "Temperature and channel-length dependence of impact ionization in Pchannel MOSFET'sin Proc. Int. Workshop VLSI Process and Device Modeling, 1994, p. 125.
34. N. Sano and A. Yoshii, "Impact ionization rates near thresholds in SiJ. Appl. Phys., vol. 75, p. 5102, 1994.
35. G. J. M. Dormans, R. D. J. Verhaar, P. J. Van Veldhoven, C. Graaf, and K. Druijf, "Self-aligned suicides in embedded EPROM'sin Proc. Non-Volatile Semiconductor Memory Workshop, 1997, p. 4.4.
36. S. Wang, "On the I-V characteristics of floating gate MOS transistorsIEEE Trans. Electron Devices, vol. 26, p. 1292, Sept. 1979.
37. B. Fischer, A. Ghetti, L. Selmi, R. Bez, and E. Sangiorgi, "Bias and temperature dependence of homogeneous hot-electron injection from silicon into silicon dioxide at low voltagesIEEE Trans. Electron Devices, vol. 44, p. 288, Feb. 1997.