Temperature Dependence of Gate and Substrate Currents in the CHE Crossover Regime

IEEE Electron Device Letters

Volumn 16, Issue 11, 1995, Pages 506-508

  Esseni, David ^a   Selmi, Luca ^a   Riccò, Bruno ^a   Sangiorgi, Enrico ^b   Bez, Roberto ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF UDINE   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

CHANNEL HOT ELECTRON CROSSOVER REGIME; CHARGE INJECTION; DRAIN VOLTAGES; FLOATING GATES;

MOSFET DEVICES;

EID: 0029406134     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.468282     Document Type: Article

References (12)

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