Combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 363-366

  Ghetti, Andrea ^a   Selmi, Luca ^a   Sangiorgi, Enrico ^a   Abramo, Antonio ^a   Venturi, Franco ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; MONTE CARLO METHODS; PARTICLE BEAM INJECTION; PROTONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SIMULATION;

ELECTRON TRANSPORT INJECTION; FULL ANISOTROPIC SILICON BAND STRUCTURE; HIGH ENERGY TRANSPORT PHENOMENA; MONTE CARLO SIMULATOR BEBOP; SILICON OXIDE GATE BARRIER;

MOS DEVICES;

EID: 0028758017     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)