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Volumn , Issue , 1995, Pages 101-102
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Gate current by impact ionization feedback in sub-micron MOSFET technologies
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
ELECTRIC CURRENT MEASUREMENT;
ELECTRON TRANSPORT PROPERTIES;
GATES (TRANSISTOR);
HEATING;
HOT CARRIERS;
IONIZATION OF SOLIDS;
MONTE CARLO METHODS;
MOSFET DEVICES;
PROBABILITY;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR JUNCTIONS;
DRAIN-SUBSTRATE JUNCTION;
GATE CURRENT;
HOT CARRIER DISTRIBUTION FUNCTION;
IMPACT IONIZATION FEEDBACK;
MONTE CARLO TRANSPORT SIMULATION;
SUB-MICRON MOSFET TECHNOLOGIES;
TENT MICRON TECHNOLOGY;
SEMICONDUCTOR DEVICE MANUFACTURE;
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EID: 0029481650
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (82)
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References (8)
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