Bias and temperature dependence of gate and substrate currents in n-MOSFETs at low drain voltage

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 307-310

  Esseni, David ^a   Selmi, Luca ^a   Bez, Roberto ^a   Sangiorgi, Enrico ^a   Ricco, Bruno ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; GATES (TRANSISTOR); OXIDE SUPERCONDUCTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; VOLTAGE DISTRIBUTION MEASUREMENT;

N CHANNEL MOSFET; SILICON OXIDE ENERGY BARRIER; SUBMICRON MOSFET; SUBSTRATE CURRENT CROSSOVER;

MOSFET DEVICES;

EID: 0028737243     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)