Substrate Current at Cryogenic Temperatures: Measurements and a Two-Dimensional Model for CMOS Technology

IEEE Transactions on Electron Devices

Volumn 34, Issue 1, 1987, Pages 64-74

  Henning, Albert K ^a   Chan, Nelson N ^b   Watt, Jeffrey T ^a   Plummer, James D ^a  

^a STANFORD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS - MEASUREMENTS; SEMICONDUCTOR DEVICES, MOS - MATHEMATICAL MODELS;

COMPLEMENTARY MOS (CMOS); MAXWELL-BOLTZMANN DISTRIBUTION; SHOCKLEY'S LUCKY ELECTRON (LE) MODEL; SUBSTRATE CURRENTS; TWO-DIMENSIONAL MODEL;

SUBSTRATES;

EID: 0023120899     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22886     Document Type: Article

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