-
1
-
-
0026866734
-
Analysis of the enhanced hot-electron injection in split-gate transistors useful for Flash EEPROM applications
-
J. Van Houdt, P. Heremans, L. Deferm, G. Groeseneken, and H. E. Maes, “Analysis of the enhanced hot-electron injection in split-gate transistors useful for Flash EEPROM applications,” IEEE Trans. Electron Devices, vol. 39, p. 1150, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 1150
-
-
Van, J.1
Houdt, P.2
Heremans, L.3
Deferm, G.4
Groeseneken, G.5
Maes, H. E.6
-
2
-
-
0027803216
-
HMOS-A high efficiency Flash E2PROM cell for embedded memory applications
-
J. Van Houdt, L. Haspeslagh, D. Wellekens, L. Deferm, G. Groeseneken, and H. E. Maes, “HMOS-A high efficiency Flash E2PROM cell for embedded memory applications,” IEEE Trans. Electron Devices, vol. 40. p. 2255. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 2255.
-
-
Van, J.1
Houdt, L.2
Haspeslagh, D.3
Wellekens, L.4
Deferm, G.5
Groeseneken, G.6
Maes, H. E.7
-
3
-
-
0028602570
-
A novel high density contactless Flash memory array using split-gate source-side injection cell for 5 V-only applications
-
Y. Ma, C. S. Pang, J. Pathak, S. C. Tsao, C. F. Chang, Y. Yamauchi, and M. Yoshimi, “A novel high density contactless Flash memory array using split-gate source-side injection cell for 5 V-only applications,” Symp. VLSI Technology Tech. Dig., 1994. p. 49.
-
(1994)
Symp. VLSI Technology Tech. Dig.
, pp. 49.
-
-
Ma, Y.1
Pang, C.S.2
Pathak, J.3
Tsao, S.C.4
Chang, C.F.5
Yamauchi, Y.6
Yoshimi, M.7
-
4
-
-
0028607820
-
A novel 3 volts-only, smallerase sector high density Flash E2PROM
-
S. Kianian, A. Levi, D. Lee, and Y.- W. Hu, “A novel 3 volts-only, small sector erase, high density Flash E2PROM,” Symp. VLSI Technology Tech. Dig., 1994, p. 71.
-
(1994)
Symp. VLSI Technology Tech. Dig.
, pp. 71.
-
-
Kianian, S.1
Levi, A.2
Lee, D.3
Hu, Y.-W.4
-
5
-
-
0026924112
-
An analytical model for the optimization of High Injection MOS Flash EEPROMdevices
-
J. Van Houdt, G. Groeseneken, and H. E. Maes, “An analytical model for the optimization of High Injection MOS Flash EEPROM devices,” Microelectron. Eng., vol. 19, p. 257, 1992.
-
(1992)
Microelectron. Eng.
, vol.19
, pp. 257
-
-
Van, J.1
Houdt, G.2
Groeseneken, G.3
Maes, H.E.4
-
6
-
-
0019567678
-
Analysis and modeling of dual-gate MOSFET’s
-
R. M. Barsan, “Analysis and modeling of dual-gate MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-28, no. 5, p. 523, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, Issue.5
, pp. 523
-
-
Barsan, R.M.1
-
7
-
-
84938013258
-
Physics and characteristics of the High Injection MOS (HIMOS) transistor: A novel fast-programmable Flash memory device, ” Ph.D. dissertation
-
Katholieke Universiteit Leuven, Belgium
-
J. Van Houdt, “Physics and characteristics of the High Injection MOS (HIMOS) transistor: A novel fast-programmable Flash memory device,” Ph.D. dissertation, Katholieke Universiteit Leuven, Belgium, 1994.
-
-
-
Van Houdt, J.1
-
9
-
-
0021483045
-
Lucky-electron model of channel hot-electron injection in MOSFET’s
-
S. Tam, P. K. Ko, and C. Hu, “Lucky-electron model of channel hot-electron injection in MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-31, no. 9, p. 1116, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, Issue.9
, pp. 1116
-
-
Tam, S.1
Ko, P.K.2
Hu, C.3
|