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Volumn 16, Issue 5, 1995, Pages 181-183

Investigation of the Soft-Write Mechanism in Source-Side Injection Flash EEPROM Devices

Author keywords

[No Author keywords available]

Indexed keywords

DATA TRANSFER; ELECTRONS; GATES (TRANSISTOR); MOS DEVICES; RELIABILITY;

EID: 0029307098     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.382233     Document Type: Article
Times cited : (9)

References (9)
  • 1
    • 0026866734 scopus 로고
    • Analysis of the enhanced hot-electron injection in split-gate transistors useful for Flash EEPROM applications
    • J. Van Houdt, P. Heremans, L. Deferm, G. Groeseneken, and H. E. Maes, “Analysis of the enhanced hot-electron injection in split-gate transistors useful for Flash EEPROM applications,” IEEE Trans. Electron Devices, vol. 39, p. 1150, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1150
    • Van, J.1    Houdt, P.2    Heremans, L.3    Deferm, G.4    Groeseneken, G.5    Maes, H. E.6
  • 3
    • 0028602570 scopus 로고
    • A novel high density contactless Flash memory array using split-gate source-side injection cell for 5 V-only applications
    • Y. Ma, C. S. Pang, J. Pathak, S. C. Tsao, C. F. Chang, Y. Yamauchi, and M. Yoshimi, “A novel high density contactless Flash memory array using split-gate source-side injection cell for 5 V-only applications,” Symp. VLSI Technology Tech. Dig., 1994. p. 49.
    • (1994) Symp. VLSI Technology Tech. Dig. , pp. 49.
    • Ma, Y.1    Pang, C.S.2    Pathak, J.3    Tsao, S.C.4    Chang, C.F.5    Yamauchi, Y.6    Yoshimi, M.7
  • 5
    • 0026924112 scopus 로고
    • An analytical model for the optimization of High Injection MOS Flash EEPROMdevices
    • J. Van Houdt, G. Groeseneken, and H. E. Maes, “An analytical model for the optimization of High Injection MOS Flash EEPROM devices,” Microelectron. Eng., vol. 19, p. 257, 1992.
    • (1992) Microelectron. Eng. , vol.19 , pp. 257
    • Van, J.1    Houdt, G.2    Groeseneken, G.3    Maes, H.E.4
  • 6
    • 0019567678 scopus 로고
    • Analysis and modeling of dual-gate MOSFET’s
    • R. M. Barsan, “Analysis and modeling of dual-gate MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-28, no. 5, p. 523, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.5 , pp. 523
    • Barsan, R.M.1
  • 7
    • 84938013258 scopus 로고    scopus 로고
    • Physics and characteristics of the High Injection MOS (HIMOS) transistor: A novel fast-programmable Flash memory device, ” Ph.D. dissertation
    • Katholieke Universiteit Leuven, Belgium
    • J. Van Houdt, “Physics and characteristics of the High Injection MOS (HIMOS) transistor: A novel fast-programmable Flash memory device,” Ph.D. dissertation, Katholieke Universiteit Leuven, Belgium, 1994.
    • Van Houdt, J.1
  • 9
    • 0021483045 scopus 로고
    • Lucky-electron model of channel hot-electron injection in MOSFET’s
    • S. Tam, P. K. Ko, and C. Hu, “Lucky-electron model of channel hot-electron injection in MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-31, no. 9, p. 1116, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.9 , pp. 1116
    • Tam, S.1    Ko, P.K.2    Hu, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.