EEPROM/flash sub 3.0V drain-source bias hot carrier writing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 989-991

  Bude, J D ^a   Frommer, A ^a   Pinto, M R ^a   Weber, G R ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRONS; HOT CARRIERS; MONTE CARLO METHODS; OPTIMIZATION; PROM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

CHANNEL INITIATED SECONDARY ELECTRON INJECTION; FLOATING GATE VOLTAGE; GATE CURRENT; HOT CARRIER WRITING; IMPACT IONIZATION FEEDBACK PROCESS; STACKED GATE MEMORY DEVICES;

MOSFET DEVICES;

EID: 0029516230     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)