Metalorganic vapor-phase epitaxial growth and characterization of cubic AlxGa1-xN alloy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1449-1452

  Nakadaira, Atsushi ^a   Tanaka, Hidenao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Cubic AlGaN; Electronic band structure; GaN; Lattice constant; Metalorganic vapor phase epitaxy; Photoluminescence

Indexed keywords

EID: 0001730994     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1449     Document Type: Article

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