Spectroscopic ellipsometry and low-temperature reflectance: Complementary analysis of GaN thin films

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 187-192

  Edwards, N V ^a   Yoo, S D ^a   Bremser, M D ^a   Horton, M N ^b   Perkins, N R ^b   Weeks Jr , T W ^a   Liu, H ^c,d   Stall, R A ^c   Kuech, T F ^b   Davis, R F ^a   Aspnes, D E ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c EMCORE Corporation   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

Excitons; GaN; Reciprocal space analysis; Reflectance; Spectroscopic ellipsometry; Valence bands

Indexed keywords

BAND STRUCTURE; ELECTROMAGNETIC DISPERSION; ELLIPSOMETRY; EPITAXIAL GROWTH; EXCITONS; LIGHT REFLECTION; LOW TEMPERATURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROMETRY; THIN FILMS;

RECIPROCAL SPACE ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0032000535     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00815-8     Document Type: Article

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