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Volumn 64, Issue 3, 1994, Pages 345-347

Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide field-effect transistor process using cobalt silicide as a diffusion/doping source

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EID: 36449001189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111143     Document Type: Article
Times cited : (7)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.