Technological aspects of epitaxial CoSi2 layers for CMOS

Applied Surface Science

Volumn 73, Issue C, 1993, Pages 19-24

  Lauwers, A ^a   Schreutelkamp, R J ^a   Brijs, B ^a   Bender, H ^a   Maex, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTING SILICON; SPUTTERING; STABILITY;

COBALT SILICIDES; EPITAXIAL LAYERS; SILICIDATION;

REFRACTORY MATERIALS;

EID: 0027906670     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(93)90141-W     Document Type: Article

References (11)

1. A self-aligned cobalt silicide technology using rapid thermal processing
2. A study of the leakage mechanisms of silicided n+/p junctions