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Volumn 70, Issue 2, 1991, Pages 693-707

Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance

Author keywords

[No Author keywords available]

Indexed keywords


EID: 36449003446     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.349625     Document Type: Article
Times cited : (46)

References (22)
  • 14
    • 0025673260 scopus 로고
    • in Proceedings of the 6th International Symposium on Silicon Materials Science and Technology, Semiconductor Silicon 1990 edited by H. R. Huff, K. G. Barraclough, and J. Chikawa, (The Electrochemical Society, Pennington)
    • (1990) , vol.90-7 , pp. 876
    • Mitwalsky, A.1    Probst, V.2    Burmester, R.3
  • 16
    • 84953829931 scopus 로고
    • PH.D. thesis, Katholieke Universiteit Leuven, Belgium
    • (1988)
    • Van den hove, L.1
  • 20
    • 84907843800 scopus 로고
    • in Proceedings of the 19th European Solid State Device Research Conference (ESSDERC), Berlin, F. R. Germany, 11–14 September 1989 edited by A. Henberger, H. Ryssel, and P. Lange (Springer, Berlin)
    • (1989) , pp. 233
    • Burmester, R.1    Joswig, H.2    Mitwalsky, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.