Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS process

Applied Surface Science

Volumn 73, Issue C, 1993, Pages 277-279

  Karlin, T E ^a   Zhang, S L ^b   Ryden K H ^b   Nygren, S ^a   Ostling M ^a   d'Heurle, F M ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b SWEDISH INSTITUTE OF COMPUTER SCIENCE   (Sweden)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; MOS DEVICES; OXIDES;

COBALT SILICIDES; GATE OXIDE INTEGRITY; SELF-ALIGNED MOS PROCESS;

REFRACTORY MATERIALS;

EID: 0027906593     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(93)90179-F     Document Type: Article

References (5)

1. A self-aligned cobalt silicide technology using rapid thermal processing