Control of lateral overgrowth of TiSi2 and CoSi2 films in VLSI circuits

Applied Surface Science

Volumn 53, Issue C, 1991, Pages 321-327

  Hobbs, L P ^a   Maex, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS--GROWING; INTEGRATED CIRCUIT MANUFACTURE--PROCESS CONTROL; SEMICONDUCTING SILICON COMPOUNDS--THIN FILMS; TITANIUM COMPOUNDS--THERMAL EFFECTS;

COBALT DISILICIDE FILMS; SELF-ALIGNED SILICIDE TECHNOLOGY; SILICIDE FILM LATERAL OVERGROWTH; TITANIUM DISILICIDE FILMS; VLSI CIRCUIT YIELD MONITORING;

INTEGRATED CIRCUITS, VLSI;

EID: 0026255297     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(91)90281-N     Document Type: Article

References (13)

1. A self-aligned cobalt silicide technology using rapid thermal processing
2. 2interconnection and contact technology for VLSI applications
3. Proc. European Workshop on Refractory Metals and Silicides
4. A model for the electric field in lightly doped drain structures
5. Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's