Ultra Shallow Junction Formation Using Diffusion from Silicides: III. Diffusion into Silicon, Thermal Stability of Suicides and Junction Integrity

Journal of the Electrochemical Society

Volumn 139, Issue 1, 1992, Pages 211-218

  Jiang, H ^a,b,d   Rozgonyi, G A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c MCNC   (United States)

^d Ericsson Telecommunications System Laboratories   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION - MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES - JUNCTIONS; SILICON COMPOUNDS - DIFFUSION;

SILICIDES; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTING SILICON;

EID: 0026715693     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2069172     Document Type: Article

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