Study of cobalt salicide fabrication on sub-quarter micron polysilicon lines

Materials Research Society Symposium - Proceedings

Volumn 429, Issue , 1996, Pages 163-168

  Chen, Wei Ming ^a   Pozder, Scott ^a   Limb, Young ^a   Sitaram, A R ^a   Fiordalice, Bob ^a  

^a Semiconductor Technology Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; DIFFUSION; ETCHING; FABRICATION; LEAKAGE CURRENTS; SILICON; SUBSTRATES; TEMPERATURE; TITANIUM NITRIDE;

ANNEAL TEMPERATURES; COBALT SALICIDE; FIRST RAPID THERMAL ANNEALING; POLYSILICON LINES; SHEET RESISTANCE; SILICIDATION; TOTAL REFLECTION X RAY FLUORESCENCE;

COBALT COMPOUNDS;

EID: 0030392367     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-429-163     Document Type: Conference Paper

References (5)