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1
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36549095157
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Rapid isothermal processing, vol. 63, pp. R59-R118, 1988.
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R. Singh, "Rapid isothermal processing,"J. Appl. Phys., vol. 63, pp. R59-R118, 1988.
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J. Appl. Phys.
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Singh, R.1
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2
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0030400493
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How rapid thermal processing can be a dominant semiconductor processing technology in the 21st century, vol. 429, pp. 81-94, 1996.
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R. Singh, R. Sharangpani, K. C. Cherukuri, Y. Chen, D. M. Dawson, K. F. Poole, A. Rohatgi, S. Narayanan, and R. P. S. Thakur, "How rapid thermal processing can be a dominant semiconductor processing technology in the 21st century,"Mater. Res. Soc., vol. 429, pp. 81-94, 1996.
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Mater. Res. Soc.
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Singh, R.1
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Cherukuri, K.C.3
Chen, Y.4
Dawson, D.M.5
Poole, K.F.6
Rohatgi, A.7
Narayanan, S.8
Thakur, R.P.S.9
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3
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0004927324
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Rapid photothermal processing, vol. 40, no. 10, pp. 193-198, 1997.
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R. Singh and R. Sharangpani, "Rapid photothermal processing,"Solid-State Technol., vol. 40, no. 10, pp. 193-198, 1997.
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Solid-State Technol.
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Singh, R.1
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4
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33747069836
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Silicon wafer thermal processing: 300 mm issues, 1997, vol. 97, no. 1, pp. 745-747.
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H. R. Huff, R. K. Goodall, R. H. Nilson, and S. K. Griffiths, "Silicon wafer thermal processing: 300 mm issues,"in191st Electrochem. Soc. Meet., ECS Ext. Abstr., 1997, vol. 97, no. 1, pp. 745-747.
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191st Electrochem. Soc. Meet., ECS Ext. Abstr.
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Huff, H.R.1
Goodall, R.K.2
Nilson, R.H.3
Griffiths, S.K.4
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5
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0021541966
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Development trends in ultra thin gate dielectrics for ultra-large-scale integration (ULSI), 1984, pp. 386-393.
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R. Singh, "Development trends in ultra thin gate dielectrics for ultra-large-scale integration (ULSI),"inInt. Microelectron. Symp., 1984, pp. 386-393.
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Int. Microelectron. Symp.
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Singh, R.1
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6
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0022986540
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Performance and reliability of thin gate dielectrics for VLSI: Materials and processing perspective, vol. 71, pp. 519-524, 1986.
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_, "Performance and reliability of thin gate dielectrics for VLSI: Materials and processing perspective,"Mater. Res. Soc., vol. 71, pp. 519-524, 1986.
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Mater. Res. Soc.
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7
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0031359422
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Sub-quarter-micron silicon integrated circuits and single-wafer processing, 1997, vol. 1, pp. 19-24.
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_, "Sub-quarter-micron silicon integrated circuits and single-wafer processing,"inProc. 21st Int. Conf. Microelectron., 1997, vol. 1, pp. 19-24.
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Proc. 21st Int. Conf. Microelectron.
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8
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0031363875
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Decreasing the time-to-market through virtual risk mitigation, 1997, vol. 1, pp. 25-30.
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M. G. Pecht, P. F. McClusky, N. W. West, S. Azarm, and J. Pecht, "Decreasing the time-to-market through virtual risk mitigation,"inProc. 21st Int. Conf. Microelectron., 1997, vol. 1, pp. 25-30.
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Proc. 21st Int. Conf. Microelectron.
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Pecht, M.G.1
McClusky, P.F.2
West, N.W.3
Azarm, S.4
Pecht, J.5
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9
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Furnaces evolving to meet diverse thermal processing needs, vol. 20, pp. 84-88, 1997.
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P. Singer, "Furnaces evolving to meet diverse thermal processing needs,"Semiconduct. Int., vol. 20, pp. 84-88, 1997.
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Semiconduct. Int.
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Singer, P.1
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10
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33747063461
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Rapid thermal processing
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R. Singh, "Rapid thermal processing,"inHandbook of Compound Semiconductors, P. Hollaway and G. McGuire, Eds. Park Ridge, NJ: Noyes, 1995, pp. 442-517.
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Handbook of Compound Semiconductors, P. Hollaway and G. McGuire, Eds. Park Ridge, NJ: Noyes, 1995, Pp. 442-517.
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Singh, R.1
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11
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5844267416
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Roles of photoeffects in rapid isothermal processing, vol. 58, pp. 1217-1219, 1991.
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R. Singh, R. P. S. Thakur, and P. Chou, "Roles of photoeffects in rapid isothermal processing,"Appl. Phys. Lett., vol. 58, pp. 1217-1219, 1991.
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Appl. Phys. Lett.
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Singh, R.1
Thakur, R.P.S.2
Chou, P.3
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12
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0005891131
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Low-temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing, vol. 70, pp. 1700-1702, 1997.
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R. Singh, K. C. Cherukuri, L. Vedula, A. Rohatgi, and S. Narayanan, "Low-temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing,"Appl. Phys. Lett., vol. 70, pp. 1700-1702, 1997.
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Appl. Phys. Lett.
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Singh, R.1
Cherukuri, K.C.2
Vedula, L.3
Rohatgi, A.4
Narayanan, S.5
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13
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0000703152
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Unusually low surface recombination velocity on silicon and germanium, vol. 57, pp. 249-252, 1986.
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E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, "Unusually low surface recombination velocity on silicon and germanium,"Phys. Rev. Lett., vol. 57, pp. 249-252, 1986.
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Phys. Rev. Lett.
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Yablonovitch, E.1
Allara, D.L.2
Chang, C.C.3
Gmitter, T.4
Bright, T.B.5
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14
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0031235295
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Rapid thermal processing of screen printed ohmic contacts, vol. 144, pp. 3237-3242, 1997.
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D. Ratakonda, R. Singh, L. Vedula, A. Rohatgi, J. Mejia, and S. Narayanan, "Rapid thermal processing of screen printed ohmic contacts,"J. Electrochem. Soc., vol. 144, pp. 3237-3242, 1997.
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J. Electrochem. Soc.
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Ratakonda, D.1
Singh, R.2
Vedula, L.3
Rohatgi, A.4
Mejia, J.5
Narayanan, S.6
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15
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0031122094
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Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)
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Y. Chen, R. Singh, and R. Narayanan, "Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD),"J. Electron. Mater., vol. 26, pp. 352-357, 1997.
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J. Electron. Mater., Vol. 26, Pp. 352-357, 1997.
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Chen, Y.1
Singh, R.2
Narayanan, R.3
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16
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0031257336
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Role of high-energy photons in dual spectral source rapid isothermal CVD, vol. 26, pp. 1113-1118, 1997.
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R. Singh and Y. Chen, "Role of high-energy photons in dual spectral source rapid isothermal CVD,"J. Electron. Mater., vol. 26, pp. 1113-1118, 1997.
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J. Electron. Mater.
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Singh, R.1
Chen, Y.2
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17
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0001682791
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Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition, vol. 67, pp. 3939-3941, 1995.
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R. Singh, S. Alamgir, and R. Sharangpani, "Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition,"Appl. Phys. Lett., vol. 67, pp. 3939-3941, 1995.
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Appl. Phys. Lett.
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Singh, R.1
Alamgir, S.2
Sharangpani, R.3
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18
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33747051066
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unpublished results.
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Y. Chen and R. Singh, unpublished results.
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Chen, Y.1
Singh, R.2
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19
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0028515004
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A model relating wearout to breakdown in thin oxide, vol. 41, pp. 1570-1580, 1994.
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D. J. Dumin, J. R. Maddux, R. S. Scott, and R. Subramaniam, "A model relating wearout to breakdown in thin oxide,"IEEE Trans. Electron Devices, vol. 41, pp. 1570-1580, 1994.
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IEEE Trans. Electron Devices
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Dumin, D.J.1
Maddux, J.R.2
Scott, R.S.3
Subramaniam, R.4
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20
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0000521933
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A computerized direct liquid injection, rapid isothermal processing assisted chemical vapor deposition system for a teflon amorphous fluoropolymer, vol. 68, pp. 1564-1570, 1997.
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R. Shanrangpani and R. Singh, "A computerized direct liquid injection, rapid isothermal processing assisted chemical vapor deposition system for a teflon amorphous fluoropolymer,"Rev. Sci. Instrum., vol. 68, pp. 1564-1570, 1997.
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Rev. Sci. Instrum.
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Shanrangpani, R.1
Singh, R.2
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21
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0031122836
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Chemical vapor deposition and characterization of amorphous teflon flouropolymer thin films, vol. 26, pp. 402-409, 1997.
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R. Sharangpani, R. Singh, and M. Drews, "Chemical vapor deposition and characterization of amorphous teflon flouropolymer thin films,"J. Electron. Mater., vol. 26, pp. 402-409, 1997.
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J. Electron. Mater.
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Sharangpani, R.1
Singh, R.2
Drews, M.3
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22
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0031079371
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Importance of high-energy photons in the curing of spin-on low dielectric constant inter-connect materials, vol. 144, pp. 669-673, 1997.
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R. Sharangpani, K. C. Cherukuri, and R. Singh, "Importance of high-energy photons in the curing of spin-on low dielectric constant inter-connect materials,"J. Electrochem. Soc., vol. 144, pp. 669-673, 1997.
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J. Electrochem. Soc.
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Sharangpani, R.1
Cherukuri, K.C.2
Singh, R.3
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