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Volumn 45, Issue 3, 1998, Pages 643-654

Role of rapid photothermal processing in process integration

Author keywords

Capacitors; Gap fill; High dielectric constant films; Low dielectric constant films; Process integration; Process time; Process uniformity; Quantum effects; Rapid photothermal processing; Shallow junction formation

Indexed keywords

ANNEALING; CAPACITORS; DIELECTRIC FILMS; PERMITTIVITY; PHOTONS; QUANTUM THEORY; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SURFACE ROUGHNESS;

EID: 0032026492     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.661226     Document Type: Article
Times cited : (17)

References (22)
  • 1
    • 36549095157 scopus 로고    scopus 로고
    • Rapid isothermal processing, vol. 63, pp. R59-R118, 1988.
    • R. Singh, "Rapid isothermal processing,"J. Appl. Phys., vol. 63, pp. R59-R118, 1988.
    • J. Appl. Phys.
    • Singh, R.1
  • 3
    • 0004927324 scopus 로고    scopus 로고
    • Rapid photothermal processing, vol. 40, no. 10, pp. 193-198, 1997.
    • R. Singh and R. Sharangpani, "Rapid photothermal processing,"Solid-State Technol., vol. 40, no. 10, pp. 193-198, 1997.
    • Solid-State Technol.
    • Singh, R.1    Sharangpani, R.2
  • 5
    • 0021541966 scopus 로고    scopus 로고
    • Development trends in ultra thin gate dielectrics for ultra-large-scale integration (ULSI), 1984, pp. 386-393.
    • R. Singh, "Development trends in ultra thin gate dielectrics for ultra-large-scale integration (ULSI),"inInt. Microelectron. Symp., 1984, pp. 386-393.
    • Int. Microelectron. Symp.
    • Singh, R.1
  • 6
    • 0022986540 scopus 로고    scopus 로고
    • Performance and reliability of thin gate dielectrics for VLSI: Materials and processing perspective, vol. 71, pp. 519-524, 1986.
    • _, "Performance and reliability of thin gate dielectrics for VLSI: Materials and processing perspective,"Mater. Res. Soc., vol. 71, pp. 519-524, 1986.
    • Mater. Res. Soc.
  • 7
    • 0031359422 scopus 로고    scopus 로고
    • Sub-quarter-micron silicon integrated circuits and single-wafer processing, 1997, vol. 1, pp. 19-24.
    • _, "Sub-quarter-micron silicon integrated circuits and single-wafer processing,"inProc. 21st Int. Conf. Microelectron., 1997, vol. 1, pp. 19-24.
    • Proc. 21st Int. Conf. Microelectron.
  • 9
    • 5644261270 scopus 로고    scopus 로고
    • Furnaces evolving to meet diverse thermal processing needs, vol. 20, pp. 84-88, 1997.
    • P. Singer, "Furnaces evolving to meet diverse thermal processing needs,"Semiconduct. Int., vol. 20, pp. 84-88, 1997.
    • Semiconduct. Int.
    • Singer, P.1
  • 11
    • 5844267416 scopus 로고    scopus 로고
    • Roles of photoeffects in rapid isothermal processing, vol. 58, pp. 1217-1219, 1991.
    • R. Singh, R. P. S. Thakur, and P. Chou, "Roles of photoeffects in rapid isothermal processing,"Appl. Phys. Lett., vol. 58, pp. 1217-1219, 1991.
    • Appl. Phys. Lett.
    • Singh, R.1    Thakur, R.P.S.2    Chou, P.3
  • 12
    • 0005891131 scopus 로고    scopus 로고
    • Low-temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing, vol. 70, pp. 1700-1702, 1997.
    • R. Singh, K. C. Cherukuri, L. Vedula, A. Rohatgi, and S. Narayanan, "Low-temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing,"Appl. Phys. Lett., vol. 70, pp. 1700-1702, 1997.
    • Appl. Phys. Lett.
    • Singh, R.1    Cherukuri, K.C.2    Vedula, L.3    Rohatgi, A.4    Narayanan, S.5
  • 15
    • 0031122094 scopus 로고    scopus 로고
    • Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)
    • Y. Chen, R. Singh, and R. Narayanan, "Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD),"J. Electron. Mater., vol. 26, pp. 352-357, 1997.
    • J. Electron. Mater., Vol. 26, Pp. 352-357, 1997.
    • Chen, Y.1    Singh, R.2    Narayanan, R.3
  • 16
    • 0031257336 scopus 로고    scopus 로고
    • Role of high-energy photons in dual spectral source rapid isothermal CVD, vol. 26, pp. 1113-1118, 1997.
    • R. Singh and Y. Chen, "Role of high-energy photons in dual spectral source rapid isothermal CVD,"J. Electron. Mater., vol. 26, pp. 1113-1118, 1997.
    • J. Electron. Mater.
    • Singh, R.1    Chen, Y.2
  • 17
    • 0001682791 scopus 로고    scopus 로고
    • Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition, vol. 67, pp. 3939-3941, 1995.
    • R. Singh, S. Alamgir, and R. Sharangpani, "Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition,"Appl. Phys. Lett., vol. 67, pp. 3939-3941, 1995.
    • Appl. Phys. Lett.
    • Singh, R.1    Alamgir, S.2    Sharangpani, R.3
  • 18
    • 33747051066 scopus 로고    scopus 로고
    • unpublished results.
    • Y. Chen and R. Singh, unpublished results.
    • Chen, Y.1    Singh, R.2
  • 20
    • 0000521933 scopus 로고    scopus 로고
    • A computerized direct liquid injection, rapid isothermal processing assisted chemical vapor deposition system for a teflon amorphous fluoropolymer, vol. 68, pp. 1564-1570, 1997.
    • R. Shanrangpani and R. Singh, "A computerized direct liquid injection, rapid isothermal processing assisted chemical vapor deposition system for a teflon amorphous fluoropolymer,"Rev. Sci. Instrum., vol. 68, pp. 1564-1570, 1997.
    • Rev. Sci. Instrum.
    • Shanrangpani, R.1    Singh, R.2
  • 21
    • 0031122836 scopus 로고    scopus 로고
    • Chemical vapor deposition and characterization of amorphous teflon flouropolymer thin films, vol. 26, pp. 402-409, 1997.
    • R. Sharangpani, R. Singh, and M. Drews, "Chemical vapor deposition and characterization of amorphous teflon flouropolymer thin films,"J. Electron. Mater., vol. 26, pp. 402-409, 1997.
    • J. Electron. Mater.
    • Sharangpani, R.1    Singh, R.2    Drews, M.3
  • 22
    • 0031079371 scopus 로고    scopus 로고
    • Importance of high-energy photons in the curing of spin-on low dielectric constant inter-connect materials, vol. 144, pp. 669-673, 1997.
    • R. Sharangpani, K. C. Cherukuri, and R. Singh, "Importance of high-energy photons in the curing of spin-on low dielectric constant inter-connect materials,"J. Electrochem. Soc., vol. 144, pp. 669-673, 1997.
    • J. Electrochem. Soc.
    • Sharangpani, R.1    Cherukuri, K.C.2    Singh, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.