Unusually low surface-recombination velocity on silicon and germanium surfaces

Physical Review Letters

Volumn 57, Issue 2, 1986, Pages 249-252

  Yablonovitch, E ^a   Allara, D L ^a   Chang, C C ^a   Gmitter, T ^a   Bright, T B ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000703152     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.57.249     Document Type: Article

References (18)

1. Characterization of Si-SiO2 Interface Traps
2. Limiting efficiency of silicon solar cells
3. The passivation of electrically active sites on the surface of crystalline silicon by fluorination