Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD)

Journal of Electronic Materials

Volumn 26, Issue 4, 1997, Pages 350-354

  Chen, Y ^a   Singh, R ^a   Narayan, J ^b  

^a AMRL   (United States)

^b North Carolina State University   (United States)

Author keywords

Dielectrics; Metalorganic chemical vapor deposition (MOCVD); Rapid isothermal processing (RIP)

Indexed keywords

ANNEALING; CURRENT DENSITY; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; PERMITTIVITY; SURFACE CLEANING; TANTALUM COMPOUNDS;

RAPID ISOTHERMAL PROCESSING (RIP); TANTALUM PENTOXIDE;

SEMICONDUCTING FILMS;

EID: 0031122094     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0100-1     Document Type: Article

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