Memory retention and switching speed of ferroelectric field effect in (Pb, La)(Ti, Zr)O3/La2CuO4:Sr heterostructure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1564-1568

  Watanabe, Yukio ^a,b   Tanamura, Mitsuru ^a   Matsumoto, Yasuaki ^a  

^a Pharmaceuticals Laboratory II   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ferroelectric; FET; Field effect; Nonvolatile memory; Oxide superconductor; Perovskite; Semiconductor

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; FERROELECTRIC MATERIALS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; NONVOLATILE STORAGE; OXIDE SUPERCONDUCTORS; PEROVSKITE; SWITCHING;

CONDUCTANCE MODULATION; DENSITY INTEGRATION; FERROELECTRIC FIELD EFFECT; MEMORY RETENTION; SWITCHING SPEED;

HETEROJUNCTIONS;

EID: 0030078786     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1564     Document Type: Article

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