Analysis of C-V and I-V data of BST thin films

Integrated Ferroelectrics

Volumn 14, Issue 1-4, 1997, Pages 133-140

  Joshi, V ^a   Dacruz, C P ^a   Cuchiaro, J D ^a   Araujo, C A ^a   Zuleeg, R ^b  

^a Symetrix Corporation   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; BOUNDARY LAYERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; LEAKAGE CURRENTS; THIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS; ENHANCED METAL ORGANIC DECOMPOSITION (EMOD); SCHOTTKY EMISSION;

DIELECTRIC FILMS;

EID: 0031332829     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708019985     Document Type: Article

References (8)

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