Growth and ferroelectric properties of strontium bismuth tantalite thin films using pulsed laser deposition combined with an annealing process

Journal of Physics D: Applied Physics

Volumn 30, Issue 4, 1997, Pages 527-532

  Yang, Pingxiong ^a   Zhou, Ningsheng ^b   Zheng, Lirong ^a   Lu, Huaixian ^b   Lin, Chenglu ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COERCIVE FORCE; CRYSTALLIZATION; DEPOSITION; ELECTRIC BREAKDOWN; FERROELECTRICITY; FILM GROWTH; FILM PREPARATION; LEAKAGE CURRENTS; OXIDES; POLARIZATION; PULSED LASER APPLICATIONS;

CRYSTALLINITY; DC BREAKDOWN FIELD; PULSED LASER DEPOSITION; STRONTIUM BISMUTH TANTALITE; SWITCHING CYCLES;

THIN FILMS;

EID: 0031076570     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/4/005     Document Type: Article

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