Highly reliable, high-CDRAM storage capacitors with CVD Ta2O5 films on rugged polysilicon

IEEE Electron Device Letters

Volumn 14, Issue 5, 1993, Pages 216-218

  Lo, G O ^a   Kwong, Dim Lee ^a   Fazan, Pierre C ^a   Mathews, V K ^a   Sandler, Nathan ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; OXIDES; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS;

ELECTRICAL CHARACTERIZATION; HIGH-CDRAM STORAGE CAPACITORS; POLYSILICON; RAPID THERMAL ANNEALING;

CAPACITORS;

EID: 0027589847     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.215172     Document Type: Article

References (18)

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