Ultrathin Tantalum Oxide Capacitor Process Using Oxygen-Plasma Annealing

Journal of the Electrochemical Society

Volumn 141, Issue 5, 1994, Pages 1246-1251

  Suzuki, Hiroshi ^a   Kamiyama, Satoshi ^a   Watanabe, Hirohito ^a   Kimura, Hidekazu ^a   Mizuki, Jun'ichiro ^a   Sakai, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

dielectric thin films; electric breakdown; leakage currents solid structure; plasma materials processing integrated circuit technology; thin film capacitors

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MASS SPECTROMETRY; OXIDES; SPECTROSCOPY; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

FILM DEPOSITION; ION MASS SPECTROMETRY; OXYGEN PLASMA HEATING; PENTA-ETHOXY-TANTALUM; TANTALUM OXIDE FILM; ULTRATHIN TANTALUM OXIDE CAPACITOR;

CAPACITORS;

EID: 0028436585     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2054904     Document Type: Article

References (17)

1. S. Kimura, Y. Kawamoto, N. Hasegawa, A. Hiraiwa, M. Horiguchi, M. Aoki, T. Kisu, and H. Sunami, in Extended Abstracts on the 19th Conference on Solid State Devices and Materials (Tokyo), p. 19, 1987, J. Jpn. Appl. Phys. (1987).
2. H. Sunami, T. Kure, N. Hashimoto, K. Itoh, T. Toyabe, and S. Asai, IEEE Trans. Electron Devices, ED-31, 746 (1984).
3. S. Ando, M. Taguchi, and T. Nakamura, Tech. Dig. 1985 Symposium on VLSI Tech., p. 90 (1985).
4. S. Zaima, T. Furuta, and Y. Yasuda, Journal of the Electrochemical Society, 137, 1297 (1990).
5. H. Shinriki, and M. Nakata, IEEE Trans. Electron Devices, 38, 455 (1991).
6. S. Kamiyama, T. Saeki, H. Mori, and Y. Numasawa, 1991 IEEE IEDM Tech. Dig. p. 827, IEEE (1991).
7. S. Kamiyama, P Y. Lesaicherre, A. Sakai, I. Nishiyama, and A. Ishitani, in Extended Abstracts on the 1992 International Conference on Solid State Devices and Materials, (Tsukuba), p. 521, J. Jpn. Appl. Phys. (1992).
8. S. Kamiyama, P. Y. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama, and A. Ishitani, Journal of the Electrochemical Society, 140, 1617 (1993).
9. H. Shinriki, M. Nakata, Y. Nishioka, and K. Mukai, IEEE Electron Devices Lett., EDL-10, 514 (1989)
10. M. Saito, T. Mori, and H. Tamura, 1986 IEEE IEDM Tech. Dig., p. 680, IEEE (1986).
11. S. Tanimoto, M. Matsui, K. Kamisako, K. Kuroiwa, and Y Tarui, Journal of the Electrochemical Society, 139, 320 (1992).
12. H. Suzuki, S. Kamiyama H. Watanabe, A. Sakai, and A. Ishitani, in Extended Abstracts on the 1993 International Conference on Solid State Devices and Materials, Makuhari, p. 862, J. Jpn. Appl. Phys. (1993)
13. Y. Numasawa, S. Kamiyama, M. Zenke, and M. Sakamoto, 1989 IEEE IEDM Techni. Dig., p. 43, IEEE (1989).
14. W. H. Knausenberger and R. N. Tauber, Journal of the Electrochemical Society, 120, 927 (1973).
15. G. S. Oehrlein, F. M. D'Heurle, and A. Reisman, J. Appl. Phys., 55, 3715 (1984).
16. S. Roberts, J. Ryan, and L. Nesbit, Journal of the Electrochemical Society, 133, 1405 (1986).
17. H. Shinriki, M. Hiratani, A. Nakao, and S. Tachi, in Extended Abstracts on the 1991 International Conference on Solid State Device and Materials, Yokohama, p. 198, J. Jpn. Appl. Phys. (1991).