Effects of Post-Deposition Annealing on the Electrical Properties and Reliability of Ultrathin Chemical Vapor Deposited Ta2O5 Films

IEEE Electron Device Letters

Volumn 15, Issue 8, 1994, Pages 280-282

  Han, L K ^a   Yoon, G W ^a   Kwong, D L ^a   Mathews, V K ^b   Fazan, P C ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; RELIABILITY; SEMICONDUCTING SILICON; THERMAL EFFECTS;

POST DEPOSITION ANNEALING; RAPID THERMAL ANNEALING; ULTRATHIN FILMS;

THIN FILMS;

EID: 0028484276     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.296216     Document Type: Article

References (13)

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