Ultrathin Ta2O5 Dielectric Film for Highspeed Bipolar Memories

IEEE Transactions on Electron Devices

Volumn 34, Issue 9, 1987, Pages 1957-1962

  Nishioka, Yasushiro ^a   Homma, Noriyuki ^a   Shinriki, Hiroshi ^a   Mukal, Kiichiro ^a   Yamaguchi, Kunihiko ^a   Uchida, Akihisa ^a   Higeta, Keiichi ^a   Ogiue, Katumi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DATA STORAGE, DIGITAL; HEAT TREATMENT - ANNEALING; TANTALUM COMPOUNDS;

BIPOLAR MEMORIES; CAPACITOR TECHNOLOGY; TANTALUM OXIDE;

FILMS;

EID: 0023422011     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23181     Document Type: Article

References (15)

1. S. Asai, “Trends in megabit dRAMs,” in IEDM Tech. Dig., p. 6, 1984.
2. C. Hu, “Thin oxide reliability,” in IEDM Tech. Dig., 1985.
3. S. Kimura, Y. Nishioka, A. Shintani, and K. Mukai, “Leakage-current increase in amorphous Ta2O5 films due to pinpole growth during annealing below 600°C,” J. Electrochem. Soc., vol. 130, p. 2414, 1983.
4. S. Roberts, J. Ryan, and L. Nesbit, “Selective studies of crystalline Ta2O5 films,” J. Electrochem. Soc., vol. 133, p. 1405, 1986.
5. Y. Nishioka, S. Kimura, and K. Mukai, “Dielectric characteristics of a very thin Ta2O5 MIS capacitor,” in Ext. Abst. 165th Electrochem. Soc. Meeting (Cincinnati, OH), p. 160, 1984.
6. C. Hashimoto and H. Oikawa, “Leakage-current reduction in thin Ta2 O5;films using high purity Ta target,” in Ext. Abst. 17th Conf. Solid State Devices Materials (Tokyo), p. 275, 1985.
7. G. S. Qehrlein, F. M. d'Heurle, and A. Reisman, “Some properties of crystallized tantalum pentoxide thin films on silicon,” J. Appl. Phys., vol. 55, no. 10, p. 3715, 1984.
8. G. S. Oehrlein and A. Reisman, “Electrical properties of amorphous tantalum pentoxide thin film on silicon,” J. Appl. Phys., vol. 54, no 11, p. 6502, 1983.
9. Y. Nishioka, H. Shinriki, and K. Mukai, “Influence of SiO, at the Ta2O5/Si interface on dielectric characteristics of Ta2O5 capacitors,” J. Appl. Phys., vol. 61, no, 6, p. 2335, 1987.
10. K. Ohta, K. Yamada, and Y. Tarui, “Quadruply self-aligned stacked high-capactance RAM using Ta2 O5;high-density VLSI dynamic memory,” IEEE Trans. Electron Devices, vol. ED-29, p. 368, 1982.
11. T. Kato, T. Ito, M. Taguchi, T. Nakamura, and H. Ishikawa, “Interfacial oxidation of Ta2O5-Si systems for high-density D-RAM,” in Proc. Symp. VLSI Tech., p. 86, 1983.
12. A. G. Revesz and T. D. Kirkendall, “Film substrate interaction in Si/Ta and Si/Ta2 O5structures,” J. Electrochem. Soc., vol. 123, fi. 1405, 1976.
13. Y. Nishioka, S. Kimura, H. Shinriki, and K. Mukai, “Dielectric characteristics of double-layer structure of extremely thin Ta2O5/SiO2 on Si,” J. Electrochem. Soc., vol. 134, p. 410, 1987.
14. T. Tamura, M- Nakamae, H. Shiraki, T. Ishikawa, T. Akashi, H. Mayumi, T. Kubota, and T. Nakamura, “A 4.5 ns access time 4 × 4 bit ECL RAM,” IEEE J. Solid-State Circuits, vol. SC-18, p. 515, 1983.
15. K. Yamaguchi, H. Nanbu, K. Kanetani, N. Homma, Y. Nishioka, A. Uchida, and K. Ogiue, “A 3.5 ns, 2 W, 20 mm2 16 kb ECL bipolar RAM,” in IEEE Int. Solid-State Circuit Conf Tech. Papers, p. 214, 1986.