Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 421-424

  Hwang, Hyunsang ^a   Ting, Wenchi ^a   Kwong, Dim Lee ^a   Lee, Jack ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, ULSI; NITROGEN OXIDES; SEMICONDUCTOR MATERIALS--GROWTH;

OXYNITRIDE GATE DIELECTRIC; RAPID THERMAL PROCESSING;

DIELECTRIC MATERIALS;

EID: 0025578297     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)