Tantalum Oxide Thin Films for Dielectric Applications by Low-Pressure Chemical Vapor Deposition Physical and Electrical Properties

Journal of the Electrochemical Society

Volumn 140, Issue 9, 1993, Pages 2615-2621

  Kruse, Wilbur C ^b   Dobkin, Daniel M ^a  

^a Watkins Johnson Company   (United States)

^b OnTrak Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; SILICON; TANTALUM COMPOUNDS;

CRYSTALLIZATION FRONTS; NUCLEATION CENTERS; STEP COVERAGE;

THIN FILMS;

EID: 0027663268     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2220872     Document Type: Article

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