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Volumn 44, Issue 5, 1997, Pages 862-868

A new equivalent MOSFET representation of a hemt to analytically model non-linear charge control for simulation of hemt devices and circuits

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL; ELECTRIC CHARGE; EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; SIMULATION;

EID: 0031143277     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568050     Document Type: Article
Times cited : (13)

References (27)
  • 23
    • 33747683960 scopus 로고    scopus 로고
    • Proc. 11th Europ. Microwave Conf. (Workshop vol.), Stuttgart, Germany, Sept. 1991, pp. 198-205.
    • T. A. Fjeldly and M. Shur, Unified CAD models for HEMT's and MESFET's, in Proc. 11th Europ. Microwave Conf. (Workshop vol.), Stuttgart, Germany, Sept. 1991, pp. 198-205.
    • Unified CAD Models for HEMT's and MESFET's, in
    • Fjeldly, T.A.1    Shur, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.