Unified Charge Control Model and Subthreshold Current in Heterostructure Field-Effect Transistors

IEEE Electron Device Letters

Volumn 11, Issue 1, 1990, Pages 50-53

  Byun, Young Hee ^a   Lee, Kwyro ^b   Shur, Michael ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS;

EFFECTIVE ACCEPTOR CONCENTRATION; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; QUANTIZED ENERGY LEVELS; SUBTHRESHOLD CURRENT; TWO DIMENSIONAL ELECTRON GAS; UNIFIED CHARGE CONTROL MODEL (HFET);

TRANSISTORS, FIELD EFFECT;

EID: 0025251482     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46928     Document Type: Article

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